Dica de aposta como fazer uma análise de futebol

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This optimizes the potential of the SiC and GaN and improves the overall system efficiency. The applications that can reap the potential of SiC/GaN must leverage on their ability to deliver higher efficiency and operating frequency. One of them is the renewable energy power converter. To harness energy with the least loss, it is important for solar inverters to squeeze out every single percentage of power conversion efficiency. It is very common for solar inverter manufacturers to claim 99 % conversion efficiency when they are enabled by SiC or GaN. I was making some research on GaN and I do not understand why GaN is so reveolutionnary. When I take a look on the following specification RdsOn and Coss (Cds + Cgd), the GaN semiconductor has lower performance than the Si IGBT on RdsOn. About the Coss/Coes the test condition are not the same and it is a bit harder to compare Here is the GaN specification (LMG342xR030) Here is the IGBT specification (SK75GD066T) So why the GaN is so revolutionnary? https://www.semikron.com/products/product-classes/igbt-modules/detail/sk-75-gd-066-t-24912420.html https://www.ti.com/lit/ds/symlink/lmg3422r030.pdf?ts=1652979339992&ref_url=https%253A%252F%252Fwww.ti.com%252Fproduct%252FLMG3422R030 Thank you very much and have a nice day! -----------------------E D I T ------------------------------------ According to the comments, I changed the GaN datasheet and the IGBT datasheet for helping the comparaison between the both. I decided to compare the IGBT IKD06N60RATMA1 and the GaN LMG3410R070. Here are the respective datasheets: https://www.mouser.fr/datasheet/2/196/Infineon-IKD06N60R-DS-v02_05-EN-1226890.pdf https://www.ti.com/lit/ds/symlink/lmg3410r070.pdf?ts=1653036430455&ref_url=https%253A%252F%252Fwww.ti.com%252Fproduct%252FLMG3410R070 Firstly as Hearth told me, the equivalent modele of the IGBT is not the same than the GaN HEMT. I decided to consider the output characteristics for comparing the power dissipated through the semiconductor. Here is the one of the IGBT: So at 18 A it has a voltage drop of 2.4 V @ Vge = 20 V (best case), it means a power dissipation of 43.2 W. Here is the output characteristics: It is fairly linear and it seems to correspond with the RdsOn given into the datasheet: So for 18 A through 70 mOhm, the voltage drop is 1.26 V.

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