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In case of Power MOSFET, the on-resistance increases sharply with the breakdown voltage due to an increase in the resistively and thickness of the drift region required to support the high operating voltage. For this reason, the development of high current Power MOSFET with high-blocking voltage rating is normally avoided. In contrast, for the IGBT, the drift region resistance is drastically reduced by the high concentration of injected minority carriers during on-state current conduction. The forward drop from the drift region becomes dependent upon its thickness and independent of its original resistivity. Based on the structure, a simple equivalent circuit model of an IGBT can be drawn as It contains MOSFET, JFET, NPN and PNP transistors. The collector of the PNP is connected to the base of the NPN and the collector of the NPN is connected to the base of the PNP through the JFET. The NPN and PNP transistors represent the parasitic thyristor which constitutes a regenerative feedback loop. The resistor RB represents the shorting of the base-emitter of the NPN transistor to ensure that the thyristor does not latch up, which will lead to the IGBT latchup. The JFET represents the constriction of current between any two neighboring IGBT cells. It supports most of the voltage and allows the MOSFET to be a low voltage type and consequently have a low RDS(on) value. A circuit symbol for the IGBT It has three terminals called Collector (C), Gate (G) and Emitter (E). Baccarat crystal butterfly.De Reser De Primera Division B Metropolitana . Where to watch Chacarita Juniors Reserve vs.
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