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V ′ CE t = V ′ CE 0 + r ′ I sin ω t. The thermal resistance between the chip and the heatsink is actually equal to the sum of the thermal resistance of each layer in series in the heat dissipation path diagram. The thermal resistance and heat capacity of each layer are expressed by the following equation: C th = c ρ A L. The thermal diffusion angles from top to bottom layers are not exactly the same, and the thermal diffusion structure of each layer is shown in Figure 3. Due to the different thermal diffusion angle, the heat transfer area is different. In order to accurately calculate the effective heat transfer area of each layer structure, it is necessary to obtain the thermal diffusion angle of each layer through equations as follows: where S is the effective contact area of adjacent two layers, L is the thickness of each layer, and θ is the thermal diffusion angle, so the heat transfer area can be expressed by the following equation: R th and C th affect the steady and dynamic performances of the junction temperature, respectively. When the transient power consumption lasts for more than 0.5 s, it can be considered that the impedance is stable; that is, the temperature difference between the junctions is stable. At this time, the heat capacity of the IGBT can be ignored [22]. According to Figure 4, the coolant temperature and IGBT thermal loss can be calculated for the IGBT and FWD diode, respectively: T j , D = T a + P v R th j - c , D + R th c - a , D. 3. Modeling and Solutions of IGBT Modules. Based on different packaging processes, IGBT modules are mainly divided into two categories: welded IGBTs and press-pack IGBTs. Mk mobile.meus pedidos.
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