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In the future, the semiconductor industry expects IGBT power output to increase as technology evolves [11]. Similarly, the higher requirements for junction temperature mean the heat dissipation technology continues to improve to catch up with the development of the IGBT [12,13]. However, there are few studies on the heat dissipation and design of the water-cooled structure of high-voltage power amplifier IGBT modules, let alone hybrid IGBT modules with SiC chips. In this paper, the newly designed high-voltage power amplifier water-cooled heat dissipation structure based on finite element numerical simulation, the fluid characteristics, and heat transfer performance of hybrid IGBT modules are studied through the functions of ANSYS Workbench hydrodynamic calculation, heat transfer calculation, and graph calculation results to provide a reference for the subsequent structural optimization of the heatsink. 2.1. Calculation of Thermal Loss. The thermal loss of the IGBT chips is: where P s w , I and P c , I represent the switching power loss and the conduction power loss, respectively. P s w , I = 1 π f sw ( E on + E off ) I I nom V dc V nom. The conduction loss of the IGBTs can be expressed as: where V C E 0 and r are derived from the linearization of the output properties of the IGBTs: where ω is the angular frequency of the output current wave, M is the modulation index, and φ is the phase difference between the current and voltage waves. P Diode = P sw , D + P c , D. P s w , D = 1 π f sw E rr I I nom V dc V nom. P c , D = 1 2 V ′ CE 0 I π + r ′ I 2 4 − M cos φ V ′ CE 0 I 8 + r ′ I 2 3 π. Qual melhor jogo de casino 888 poker.Assim, os jogadores com TRON dispõem de uma variedade de casinos, testados ao longo do tempo, nos quais podem apostar.
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