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The applications that can reap the potential of SiC/GaN must leverage on their ability to deliver higher efficiency and operating frequency. One of them is the renewable energy power converter. To harness energy with the least loss, it is important for solar inverters to squeeze out every single percentage of power conversion efficiency. It is very common for solar inverter manufacturers to claim 99 % conversion efficiency when they are enabled by SiC or GaN. 如图6所示，目前业界的氮化镓晶体管产品是平面结构，即源极，门极和漏极在同一平面内，这与与超级结技术(Super Junction)为代表的硅MOSFET的垂直结构不同。门极下面的P-GaN结构形成了前面所述的增强型氮化镓晶体管。漏极旁边的另一个p-GaN结构是为了解决氮化镓晶体管中常出现的电流坍陷(Current collapse)问题。英飞凌科技有限公司的CoolGaN产品的基材（Substrate）采用硅材料，这样可以大大降低氮化镓晶体管的材料成本。由于硅材料和氮化镓材料的热膨胀系数差异很大，因此在基材和GaN之间增加了许多过渡层(Transition layers)，从而保证氮化镓晶体管在高低温循环，高低温冲击等恶劣工况下不会出现晶圆分层等失效问题。 Turn-on switching loss. Conduction loss: 4.4W. It should be noted that adopting SiC MOSFETs has several advantages other than reducing loss. Handicap asiatico o que é.Telefone Mensagem. 250 m² 4 Quartos 2 Banheiros 5 Vagas.
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