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In the next stage, a power-cycling test was performed, and the impact of degradation on the IGBT was analyzed by these measurement methods. The results show that after 18,000 thermal cycles, a visible shift in I–V curve can be seen. Dados Técnicos: depois de pagar a taxa de registro de marcas Ela deixa o ambiente mais acolhedor e ainda leva um pouco de cor para os ambientes. It is likely that in our case, during the performed power-cycling test and aging process, the bond wires were most affected, but this hypothesis needs further investigation. Today, power semiconductor devices have become an integral part of power electronic circuits, and advances in these devices have had a huge impact on related industries as high-power circuit designs have become possible. Since bipolar power transistors offer a low-current gain, placing these bipolar transistors in high-voltage fields will significantly increase the size and weight of the designed circuit; by its nature, the cost of the system will be also escalated [1]. As an insulated-gate bipolar transistor (IGBT) is a combination of metal–oxide semiconductor field-effect transistor (MOSFET) and bipolar junction transistor (BJT), it has inherited the positive features of both the transistor and MOSFET [2]. For this reason, while designing a high-power circuit, much attention is paid to the correct choice of the IGBTs in accordance with the relevant application. Nevertheless, the designers should consider the practical limitations of the power semiconductor device and have a good understanding of all the operating details of the selected IGBT. Atletico simbolo.50% Desconto. R$ 69,99 R$ 34,90.
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[Google Scholar] [CrossRef] Zhang, Y.; Liu, Y.; Li, C.; Li, J. Analysis of Fault Precursor Parameters under Accelerated Aging Tests for IGBT Modules. In Proceedings of the 17th China International Forum on Solid State Lighting & International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS), Shenzhen, China, 23–25 November [Google Scholar] [CrossRef] Patil, N.; Das, D.; Goebel, K.; Pecht, M. Failure precursors for insulated gate bipolar transistors (IGBTs). In Proceedings of the 9th International Seminar on Power Semiconductors (ISPS 2008), Prague, Czech, 27–29 August 2008; pp. 107–112. [Google Scholar] Nguyen, M.H.; Kwak, S. Enhance Reliability of Semiconductor Devices in Power Converters.
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